Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors
| Autor: | Vahid Fallahi, F. Magnusson, Tuan Le, Sohrab R. Sani, Anders Persson, M. Zubair, Fatjon Qejvanaj, Johan Åkerman, Sunjae Chung, Seyed Majid Mohseni |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Planar hall effect business.industry Noise (electronics) Electronic Optical and Magnetic Materials Nuclear magnetic resonance Stack (abstract data type) Ferromagnetism Sputtering Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Sensitivity (electronics) |
| Zdroj: | IEEE Transactions on Magnetics. 50:1-4 |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2014.2330846 |
| Popis: | In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|