Ambipolar Carrier Injection Characteristics of Erbium-Silicidedn-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
| Autor: | Chel-Jong Choi, Moongyu Jang, Seongjae Lee, Myung-Sim Jeon, Byoungchul Park, Yarkyeon Kim |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Ambipolar diffusion Schottky barrier Transistor General Engineering General Physics and Astronomy chemistry.chemical_element Drain-induced barrier lowering Electron law.invention Erbium chemistry law Gate oxide Optoelectronics Field-effect transistor business |
| Zdroj: | Japanese Journal of Applied Physics. 45:730-732 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.45.730 |
| Popis: | Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal–oxide–semiconductor field-effect transistors (SB-MOSFETs) with a 5 nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 105 with low leakage current less than 10 nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity. |
| Databáze: | OpenAIRE |
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