The Use of Metalorganics in the Preparation of Semiconductor Materials: VIII . Feasibility Studies of the Growth of Group III ‐Group V Compounds of Boron by MOCVD
| Autor: | H. M. Manasevit, A. J. Nelson, W. B. Hewitt, A. R. Mason |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Renewable Energy
Sustainability and the Environment Analytical chemistry chemistry.chemical_element Crystal growth Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Trimethylborane BORO chemistry.chemical_compound chemistry Materials Chemistry Electrochemistry Organic chemistry Metalorganic vapour phase epitaxy Boron Metalorganics |
| Zdroj: | Journal of The Electrochemical Society. 136:3070-3076 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2096403 |
| Popis: | The MOCVD growth of B-As and B-P films on Si, sapphire, and Si-on-sapphire substrates is described; in this process, trimethylborane (TMB) or triethylborane (TEB) is pyrolyzed in the presence of AsH3 or PH3 in an H2 atmosphere. The procedures employed are outlined, and the results are presented in graphs, tables, and micrographs. It is found that the growth rate of the primarily amorphous films is dependent on the TMB or TEB concentration but approximately constant for TEB and AsH3 at 550-900 C. The nominal compositions of films grown using TMB are given as B(12-16)As2 and B(1-1.3)P. Carbon impurities and significant stress, bowing, and crazing are observed in the films grown on Si substrates, with the highest carbon content in the films grown from TMB and PH3. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|