Structure analysis of epitaxial Gd2O3/Si(0 0 1) for high-k gate dielectric applications

Autor:	Tatsuro Watahiki, Wolfgang Braun, Roman Shayduk, Henning Riechert, Bernd Jenichen, Brad P. Tinkham
Rok vydání:	2009
Předmět:	Reflection high-energy electron diffraction Materials science Gate dielectric Analytical chemistry Condensed Matter Physics Epitaxy Amorphous solid Inorganic Chemistry chemistry.chemical_compound chemistry Electron diffraction Silicide Materials Chemistry Molecular beam epitaxy High-κ dielectric
Zdroj:	Journal of Crystal Growth. 311:2179-2182
ISSN:	0022-0248
Popis:	We study the structure of epitaxial Gd2O3 layers grown on Si(0 0 1) using reflection high-energy electron diffraction (RHEED) and grazing incidence X-ray diffraction (GIXRD). When the oxygen partial pressure is not sufficiently high, GIXRD reveals a silicide phase at the interface. The use of higher oxygen pressure results in a rapid decrease in the crystallinity of the Gd2O3 layers and they become amorphous. Increasing the substrate temperature from 650 to 700 °C improves the epitaxy with larger domains and smoother surfaces. Also no silicide phase is detected by GIXRD. Therefore, the control of oxygen pressure and substrate temperature is very important to obtain high-quality epitaxial Gd2O3 layers without silicide at the interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b572920f7a7d1b9e17029558f92bac7f https://doi.org/10.1016/j.jcrysgro.2008.10.012 Zobrazit plný text záznamu Full Text from ScienceDirect