Investigation of rod-like defects in MOS 12

Autor: Steve Howard, Ron Ceton, Ray Goodner, John Rios, Fourmun Lee, Ping Wang
Rok vydání: 1998
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.324417
Popis: A unique defect type was detected by routine KLA inspection. The shape of the defect was rod like, about 1/2 micron in width with length varying from 1 to several microns. The defects were located in the notch area with defect counts often exceeding one thousand per wafer. Through the analysis of bitmap/visual defect overlay, it was shown these rod-like defects are yield killers. This was confirmed by cumulative probe yield maps which showed lower yields for dice located near the notch. In this paper, the mechanism for the rod- like defect formation will be described in detail. The techniques used to investigate the mechanism, defect characteristics, and yield impact will be discussed. The implementation of the solution to eliminate the rod defects will also be discussed.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze: OpenAIRE