Autor: |
R. Freitag, L Steinke, R. Sauer, D.G Ebling, K. Thonke |
Rok vydání: |
2005 |
Předmět: |
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Zdroj: |
MRS Internet Journal of Nitride Semiconductor Research. 10 |
ISSN: |
1092-5783 |
DOI: |
10.1557/s1092578300000545 |
Popis: |
We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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