Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing
| Autor: | Yuichi Onozawa, Naoto Fujishima, Yong Liu, Chao Xiao, Linhua Huang, Johnny K. O. Sin, Xin Peng, Takashi Tsuji, Yixiao Ding |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Gate dielectric Analytical chemistry Dielectric 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Gate oxide Electric field 0103 physical sciences Silicon carbide Thermal stability Electrical and Electronic Engineering Deposition (law) |
| Zdroj: | IEEE Transactions on Electron Devices. 68:2133-2137 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We fabricated Al2O3/LaAlO3/SiO2 (ALS) gate stacks on 4H-SiC, with LaAlO3 (LAO) film being annealed in O2 atmosphere. The ALS gate stack annealed at 700 °C exhibits a much higher breakdown effective electric field ( ${E}_{\text {eff}}$ ), which is approximately 1.8 times higher than that of traditional SiO2 gate oxide. The ALS gate stack also yields a low interface state density ( ${D}_{\text {it}}$ ) thanks to the intact LAO film. However, an annealing temperature as high as 800 °C induced traps in the LAO film and deteriorated the SiO2–SiC interface. The 700 °C-annealed LAO film with a high dielectric constant ( $\kappa $ ) of 14 and a low trap density, coupled with good electrical characteristics, makes it a promising gate dielectric for SiC power metal-oxide-semiconductor (MOS) device applications. |
| Databáze: | OpenAIRE |
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