Carrier recombination and lifetime in highly doped silicon
| Autor: | R.P. Mertens, Jerry G. Fossum, D.S. Lee, J.F. Nijs |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
inorganic chemicals
Yield (engineering) Materials science Auger effect Silicon Doping technology industry and agriculture chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake chemistry Chemical physics Condensed Matter::Superconductivity Materials Chemistry symbols Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering Atomic physics Recombination |
| Zdroj: | Solid-State Electronics. 26:569-576 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(83)90173-9 |
| Popis: | The predominance of phonon-assisted band-band Auger recombination in highly doped silicon is demonstrated by showing that no recombination mechanism involving common (unavoidable) defects in silicon can yield carrier lifetimes that are consistent with the measured lifetimes, which exhibit an inverse-quadratic doping-density dependence, and/or with their temperature dependence. Both trap-assisted-Auger and Shockley-Read-Hall recombination mechanisms are considered, and dependences of the defect density on the doping density, which are implied by theory and experiment, are accounted for. |
| Databáze: | OpenAIRE |
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