A new, universal and fast switching gate-drive-concept for SiC-JFETs based on current source principle

Autor:	Wilfried Hofmann, Daniel Domes, Ralf Werner, S. KrauB, K. Domes
Rok vydání:	2006
Předmět:	business.industry Computer science Electrical engineering JFET Hardware_PERFORMANCEANDRELIABILITY Current source Network topology Overcurrent chemistry.chemical_compound Parasitic capacitance chemistry Hardware_INTEGRATEDCIRCUITS Silicon carbide Electronic engineering business Diode Voltage
Zdroj:	2006 37th IEEE Power Electronics Specialists Conference.
Popis:	The paper proposes a new and universal gate drive concept for SiC JFETs taking into account the special demands of these normally-on devices. Particularly with regard to voltage source inverter or matrix converter topologies there is the static need of keeping the JFET device safe in the off-state during a passive switch event of the anti-parallel diode. The dynamic need is the ability to turn off very fast while charging all participating parasitic capacitances. The proposed gate drive circuit ensures safe operation of the gate-source-pn-junction especially with respect to its different pinch-off and break-through voltages of the JFET samples. Beside that, over-current and under-voltage protection are implemented, too.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b516145690f8d1fa82517d833fdcd144 https://doi.org/10.1109/pesc.2006.1712169 Zobrazit plný text záznamu