Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Autor:	Valdas Jokubavicius, Michl Kaiser, Mikael Syväjärvi, Thomas Hupfer, Philip Hens, Peter J. Wellmann
Rok vydání:	2013
Předmět:	Mass transport Materials science Mean free path Mechanical Engineering Condensed Matter Physics Epitaxy chemistry.chemical_compound chemistry Mechanics of Materials Chemical physics Silicon carbide General Materials Science Sublimation (phase transition) Inert gas Sublimation epitaxy
Zdroj:	Materials Science Forum. :52-55
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.740-742.52
Popis:	Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b50c5c87a8a3829def2b488d59cb364b https://doi.org/10.4028/www.scientific.net/msf.740-742.52 Zobrazit plný text záznamu