Autor:	W. R Allen, James O. Kiggans, Hal D. Kimrey, Mark A. Janney
Rok vydání:	1997
Předmět:	Materials science Mechanical Engineering Analytical chemistry Activation energy Substrate (electronics) law.invention Mechanics of Materials law Dielectric heating Sapphire Van de Graaff generator General Materials Science Wafer Diffusion (business) Microwave
Zdroj:	Journal of Materials Science. 32:1347-1355
ISSN:	0022-2461
DOI:	10.1023/a:1018568909719
Popis:	The diffusion of oxygen in sapphire was accelerated by heating in a 28 GHz microwave furnace as compared with heating in a conventional furnace. Tracer diffusion experiments were conducted using 18O. Single crystal sapphire wafers with a (1 0 1 2) rhombohedral planar orientation were used as the substrate. Concentration depth profiling was done by proton activation analysis using a 5 MeV Van de Graaff accelerator. The diffusion of 18O was greatly enhanced by microwave heating as compared with conventional heating in the 1500–1800°C range. The apparent activation energy for 18O bulk diffusion was determined to be 390 kJ mol-1 with microwave heating and 650 kJ mol-1 with conventional heating.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b4fd27a1b1f6f3768e01ced70a4f1804 https://doi.org/10.1023/a:1018568909719 Zobrazit plný text záznamu Full text from SpringerLink