Soft Errors Induced by High-Energy Electrons
| Autor: | Aaron M. Williams, Austin H. Roach, Adam R. Duncan, Matthew J. Gadlage, Matthew J. Kay, Dobrin P. Bossev |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Physics
020301 aerospace & aeronautics 010308 nuclear & particles physics business.industry Monte Carlo method Electrical engineering 02 engineering and technology Alpha particle Electron 01 natural sciences Electronic Optical and Magnetic Materials Computational physics Semiconductor Soft error 0203 mechanical engineering Ionization 0103 physical sciences Static random-access memory Electrical and Electronic Engineering Safety Risk Reliability and Quality business Energy (signal processing) |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 17:157-162 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2016.2634626 |
| Popis: | In the semiconductor reliability community, soft error research has primarily focused on neutrons and alpha particles. However, there are certain situations and environments in which high-energy electrons may also lead to soft errors. In this paper, we show that high energy electrons and the secondary particles created by them are capable of producing soft errors. In this paper, the energy dependence of electron-induced soft errors in a 28 nm bulk CMOS SRAM-based FPGA is recorded. Error rates are measured in both the embedded RAM and configuration RAM of the FPGA. This paper is the first research to explore the energy dependence of electron-induced single-event upsets in a commercial-off-the-shelf device. The measured electron-induced error cross sections are between $10^{{-20}}$ and $10^{{-17}}~ {\rm cm}^{{2}}$ /bit depending on memory cell tested and the electron energy. Monte Carlo energy deposition simulations are used to further explore the mechanisms involved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|