Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
| Autor: | Simon M. Sze, Chih-Cheng Shih, Rui Zhang, Chih-Hung Pan, Kuan-Chang Chang, Jen-Chung Lou, Ya-Hsiang Tai, Yin-Chih Pan, Tian-Jian Chu, Ya-Liang Yang, Tai-Fa Young, Tsung-Ming Tsai, Jian-Yu Chen, Min-Chen Chen, Yu-Ting Su, Ting-Chang Chang, Yong-En Syu, Jung-Hui Chen, Geng-Wei Chang |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Graphene Doping Oxide Spectral line Electronic Optical and Magnetic Materials law.invention symbols.namesake Crystallography chemistry.chemical_compound chemistry Sputtering law Electronic engineering symbols Electrical and Electronic Engineering Fourier transform infrared spectroscopy Silicon oxide Raman spectroscopy |
| Zdroj: | IEEE Electron Device Letters. 34:677-679 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | In this letter, a double-active-layer $({\rm Zr}{:}{\rm SiO}_{x}/{\rm C}{:}{\rm SiO}_{x})$ resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the ${\rm C}{:}{\rm SiO}_{x}$ layer. It can be observed that ${\rm Zr}{:}{\rm SiO}_{x}/{\rm C}{:}{\rm SiO}_{x}$ structure has superior switching performance and higher stability compared with the single-active-layer $({\rm Zr}{:}{\rm SiO}_{x})$ structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. $I-V$ characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model. |
| Databáze: | OpenAIRE |
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