Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates
| Autor: | Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose, Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya, Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya, Tohru Nakamura |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Schottky diode Gallium nitride Dielectric Atmospheric temperature range Electronic Optical and Magnetic Materials chemistry.chemical_compound Reflection (mathematics) chemistry Optoelectronics Electrical and Electronic Engineering Photonics business Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 59:1091-1098 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2012.2185241 |
| Popis: | The influence of surface recombination on forward current-voltage (IF-VF) characteristics of gallium nitride (GaN) p+n diodes formed on GaN free-standing substrates was both experimentally and computationally investigated. In the temperature range of 373-273 K, the surface-recombination velocity 5 of 0.5-μm n GaN overetched circular-mesa diodes was derived, respectively, as 2-10 × 107 and 1 × 107 cm/s for diodes with and without a mesa-field-plate termination structure consisting of dielectric and metal layers. It was shown that IF (VF |
| Databáze: | OpenAIRE |
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