Ge-doped magnetite thin films with an enhanced resistance to oxidation
| Autor: | Seishi Abe |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Doping Analytical chemistry 02 engineering and technology Activation energy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Sputtering visual_art 0103 physical sciences visual_art.visual_art_medium Ceramic Selected area diffraction Thin film 0210 nano-technology Magnetite |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 465:25-32 |
| ISSN: | 0304-8853 |
| Popis: | The ability of metal-doped magnetite (Fe3O4) thin films to resist oxidation during annealing in air was investigated. The films were prepared on glass substrates by radio-frequency sputtering using a target of metal chips set on a ceramic Fe3O4 disk. The metal elements used in this study were Ge, Mo, W, and Mg. The films were annealed at different temperatures in air and the activation energy of oxidation was estimated. The Ge-doped film was high stable against oxidation with an activation energy of 490 KJ/mol, which was 2.5 times larger than that of undoped film. Elemental mapping using energy dispersive X-ray microscopy (EDX) and selected area electron diffraction (SAED) revealed that the Ge-doped Fe3O4 film was composed of a heterostructure that consisted of α-Fe2O3 and Fe3O4 containing small amount of Ge. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect