MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

Autor:	M. R. Gokhale, Abdul Kadir, Andreas Rosenauer, Arnab Bhattacharya, A. Pretorius
Rok vydání:	2008
Předmět:	Inorganic Chemistry Diffraction Photoluminescence Materials science Condensed matter physics Transmission electron microscopy Materials Chemistry Metalorganic vapour phase epitaxy Condensed Matter Physics Epitaxy Quantum well Characterization (materials science) Quantum size
Zdroj:	Journal of Crystal Growth. 311:95-98
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2008.10.056
Popis:	We report on the growth of InN/GaN quantum well structures via metal organic vapour-phase epitaxy. From X-ray diffraction and transmission electron microscopy measurements we find that at 530 °C, the temperature optimal for InN growth, the quality of the GaN barriers is too poor and quantum well formation is not observed. However, InN quantum wells can be grown at a higher temperature of 570 °C, although with rough interfaces and evidence of In segregation. Though photoluminescence is obtained from all samples, no evidence of quantum size effects is seen.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b4e23df3e789c93fa337ebca39b15a7e https://doi.org/10.1016/j.jcrysgro.2008.10.056 Zobrazit plný text záznamu Full Text from ScienceDirect