Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC

Autor:	Gerhard Pensl, T. Troffer, Hisayoshi Itoh
Rok vydání:	1998
Předmět:	Materials science Ion implantation chemistry Mechanics of Materials Aluminium Mechanical Engineering Metallurgy chemistry.chemical_element General Materials Science Condensed Matter Physics Boron
Zdroj:	Materials Science Forum. :685-688
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.264-268.685
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b4e12fefa05d2f98a63cdcac48309ba4 https://doi.org/10.4028/www.scientific.net/msf.264-268.685 Zobrazit plný text záznamu