Effects of Lattice Types on GaN-Based Photonic Crystal Surface-Emitting Lasers
| Autor: | Chih-Cheng Chen, Tien-Chang Lu, Tzeng-Tsong Wu |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Gallium nitride Threshold energy Laser Square lattice Atomic and Molecular Physics and Optics law.invention chemistry.chemical_compound Lattice constant chemistry law Optoelectronics Degree of polarization Electrical and Electronic Engineering business Lasing threshold Photonic crystal |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 21:426-431 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2014.2358086 |
| Popis: | GaN-based photonic crystal (PC) surface emitting lasers with different lattice types including hexagonal, square, and honeycomb lattice were fabricated and characterized. Laser characteristics including threshold conditions, lasing spectra, polarization, and divergence angle of devices with different lattice have been studied and discussed. The threshold energy density of the device with honeycomb, hexagonal, and square lattice was measured to be approximately 1.6, 2.3, and 3.8 mJ/cm2 at room temperature, showing superior characteristics of applying honeycomb as PC lattice patterns. Moreover, the experimental results were matched well to the theoretical prediction using the multiple scattering method. Finally, the laser characteristics of devices with three lattice types such as divergence angle and degree of polarization (DOP) were analyzed and discussed. The device with honeycomb lattice shows low threshold, high DOP of 86%, and low divergence angle of 1.3° among three lattice types, demonstrating its potential in the future surface emitting laser sources. |
| Databáze: | OpenAIRE |
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