Incorporation of rare earths into II–VI compounds during molecular beam epitaxial growth: Extended x-ray absorption fine structure study of Sm-doped ZnTe
| Autor: | L. Parthier, J. Röhrich, R. Boyn, D. Wruck, Fritz Henneberger |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 84:6049-6054 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.368914 |
| Popis: | We present extended x-ray absorption fine structure measurements performed on ZnTe:Sm films, at the Sm L3 edge. The films (thickness several hundred nanometers) were grown by molecular beam epitaxy on GaAs substrates and were doped during growth, achieving Sm concentrations of the order 1021–1022 cm−3. Analysis of the experimental data by standard methods shows that the majority of the Sm atoms are located on sites with octahedral Te coordination, with a Sm–Te bond length about 3.1 A. These sites are thought to form during growth from zinc-blende-type interstitial sites due to the high chemical affinity between the rare earth and the chalcogen atoms. This result agrees with suggestions made by us in earlier work, based on optical and structural studies. A small part of the Sm atoms (with a fraction depending on the total Sm concentration) is found to be on sites with nearest-neighbor oxygen atoms. The results indicate two subspecies of the latter type, the mean Sm–O bond lengths lying between about 2.3 an... |
| Databáze: | OpenAIRE |
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