Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

Autor: Masakazu Washio, Satoshi Okubo, Tomoko Gowa Oyama, Taeko Yoshikawa, Naoyuki Fukutake, Toshitaka Oka, Yuya Takasawa, Takeshi Murakami, Hidehiro Tsubokura, Akihiro Oshima, Yoshimasa Hama
Rok vydání: 2013
Předmět:
Zdroj: Radiation Physics and Chemistry. 92:37-42
ISSN: 0969-806X
DOI: 10.1016/j.radphyschem.2013.06.020
Popis: Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6 MeV/u) under vacuum ( −4 Pa) at room temperature (298 K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N 7+ ), compared with lower-energy ion beams (keV region). A larger atomic number ( Z ) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne 10+ and Xe 54+ changed from 6.5×10 −13 to 2.0×10 −11 μm/(ion cm −2 ), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.
Databáze: OpenAIRE