Low temperature deposition of SiO insulator film with newly developed facing electrodes chemical vapor deposition

Autor:	Hiroshi Furuta, Toshiyuki Kawaharamura, Takahiro Hiramatsu, Mamoru Furuta, Tokiyoshi Matsuda, Takashi Hirao
Rok vydání:	2014
Předmět:	Materials science Analytical chemistry Insulator (electricity) Chemical vapor deposition Plasma Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Thin-film transistor Electric field Electrode Breakdown voltage Instrumentation Tetramethylsilane
Zdroj:	Vacuum. 101:189-192
ISSN:	0042-207X
DOI:	10.1016/j.vacuum.2013.08.003
Popis:	Insulating SiO x film was deposited with newly developed plasma source at low temperature for fabrication of flexible devices on plastic substrate. The plasma was generated with electromagnetic field by two facing electrodes including magnets inside and covered with SiO 2 targets. The higher deposition rate was achieved from 2.0 to 33 nm/min, with the mixture of tetramethylsilane and oxygen as source gases. The insulating properties were obtained as 3 × 10 −8 A/cm 2 at the electric field of 1 MV/cm, and the breakdown voltage of 5 MV/cm at 1 × 10 −6 A/cm 2 for the film deposition rate at 11.6 nm/min. High density plasma enhanced by magnetic field would be the hopeful solution for gate insulator deposited at high deposition rate with low temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b4ca71e7f82a3767d16988b20d14729d https://doi.org/10.1016/j.vacuum.2013.08.003 Zobrazit plný text záznamu Full Text from ScienceDirect