| Autor: |
Takao Ishida, Hirokazu Kobayashi, Hirofumi Kawanaka, Makoto Okamoto, Jun-ichi Ono, Hiroshi Tsubomura |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. 312:57-67 |
| ISSN: |
0022-0728 |
| DOI: |
10.1016/0022-0728(91)85144-e |
| Popis: |
The photoelectrochemical characteristics of bare n-Si electrodes in non-aqueous solutions have been studied by the current-voltage, capacitance-voltage, transient current and work function change measurements. A high photocurrent is obtained from a Si electrode in an acetone solution (26.7 mA cm−2 under AM 1 100 mW cm−2 illumination without the correction of the light intensity due to the absorption by the redox solution and the reflection at the glass window). This high photocurrent is attributed to the high charge transfer rate between Si and the redox species and the high diffusion velocity of the redox species in the solution. For the case of a Si electrode immersed in methanol, a high photovoltage (max. 685 mV) is obtained. This high photovoltage is attributed to the formation of a high energy barrier since the Si work function is decreased by the methanol chemisorption. A high photovoltage and a high photocurrent are obtained from a Si electrode immersed in an acetone solution containing a small amount of methanol, indicating that methanol is chemisorbed selectively on the Si surface without affecting the charge transfer rate at the Si/solution interface and the diffusion rate of the redox couple in the solution. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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