Electrical characterisation of Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation
| Autor: | Cs. Ducso, Roberto Mosca, István Bársony, I. Pintér, Z. S. Makaró, E. Gombia, Vo Van Tuyen, Zs. J. Horváth, M. Ádám |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Band gap business.industry Schottky barrier Analytical chemistry Schottky diode Plasma Atmospheric temperature range Condensed Matter Physics Metal–semiconductor junction Electronic Optical and Magnetic Materials Ion Metal visual_art Materials Chemistry visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 42:221-228 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(97)00235-9 |
| Popis: | Current–voltage and capacitance–voltage measurements on Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation of H + and P + ions have been performed in the temperature range of 80–360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented. |
| Databáze: | OpenAIRE |
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