Surface states in the band-gap for Pt-deposited p-InP photoelectrochemical cells

Autor:	Y. Nakato, Fumiaki Mizuno, Hikaru Kobayashi
Rok vydání:	1994
Předmět:	Chemistry Band gap Analytical chemistry General Physics and Astronomy Mineralogy Conductance Surfaces and Interfaces General Chemistry Photoelectrochemical cell Condensed Matter Physics Surfaces Coatings and Films Transition metal Electrode Extrinsic semiconductor Surface states Electrode potential
Zdroj:	Applied Surface Science. 81:399-408
ISSN:	0169-4332
DOI:	10.1016/0169-4332(94)90043-4
Popis:	The effect of surface states in the band-gap for Pt-deposited p-InP(100) photoelectrochemical (PEC) cells on the cell performance has been investigated by current-voltage (I–V) and conductance (G) measurements. The maximum of the surface state density is located at ≈0.16 eV above the InP valence-band maximum and these states have a negative or neutral charge state depending on the electrode potential. The photovoltage of the PEC cells is increased by anodic dissolution, and this increase is attributed to the removal of the surface states. The increase in the barrier height is nearly proportional to the decrease in the surface state density. This indicates that the surface states decrease the photovoltage by lowering the barrier height in the p-InP due to their static negative charge, not by the increase in the density of the surface recombination current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b4c1d4bd3418047140b27b3b07ed8cca https://doi.org/10.1016/0169-4332(94)90043-4 Zobrazit plný text záznamu