Studies of Nano-structured Se77Sb23−x Ge x Thin Films Prepared by Physical Vapor Condensation Technique
| Autor: | M. A. Alvi |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope Band gap Condensation Analytical chemistry 02 engineering and technology Activation energy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Differential scanning calorimetry 0103 physical sciences Materials Chemistry Charge carrier Electrical and Electronic Engineering Thin film 0210 nano-technology |
| Zdroj: | Journal of Electronic Materials. 46:1223-1229 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Bulk Se77Sb23−xGex material with x = 4 and 12 was prepared by employing a melt quench technique. Its amorphous as well as glassy nature was confirmed by x-ray diffraction analysis and nonisothermal differential scanning calorimetry measurements. The physical vapor condensation technique was applied to prepare nanostructured thin films of Se77Sb23−xGex material. The surface morphology of the films was examined using field-emission scanning electron microscopy, revealing average particle size between 20 nm and 50 nm. Systematic investigation of optical absorption data indicated that the optical transition was indirect in nature. The dark conductivity (dc conductivity) of nano-structured Se77Sb23−xGex thin films was also investigated at temperatures from 313 K to 463 K, revealing that it tended to increase with increasing temperature. Analyses of our experimental data also indicate that the conduction is due to thermally supported tunneling of charge carriers in confined states close to the band edges. The calculated values of activation energy agree well with the optical bandgap. |
| Databáze: | OpenAIRE |
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