Modeling the effect of source/drain junction depth on bulk-MOSFET scaling
| Autor: | James D. Meindl, Raghunath Murali |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Engineering
business.industry Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Electronic Optical and Magnetic Materials Threshold voltage Set (abstract data type) MOSFET Hardware_INTEGRATEDCIRCUITS Materials Chemistry Electronic engineering Electrical and Electronic Engineering business Scaling Junction depth |
| Zdroj: | Solid-State Electronics. 51:823-827 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2007.03.012 |
| Popis: | Accurate threshold voltage (VT) modeling of bulk-MOSFETs is important for device optimization and circuit simulation. Existing VT models cannot model the impact of source/drain junction depth on VT rolloff. A new model is proposed that can accurately model bulk-MOSFET VT including the source/drain junction depth. The model also provides a scale-length that can be used to rapidly predict the minimum channel-length for a given set of technology parameters. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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