| Autor: |
S.C. Goh, X.P. Huang, T. Warminski, Brian F. Usher, D. Zhou |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140). |
| DOI: |
10.1109/commad.1998.791644 |
| Popis: |
Most epitaxial layer growth involves mismatch between layer and growth substrate, even in the case of nearly lattice matched systems such as GaAs/AlAs. The accurate determination of layer thicknesses and stoichiometry in single and multi-layer heterostructures by x-ray diffraction requires knowledge of the elastic properties of the layers so that accurate account can be taken of strain effects. A novel technique has been developed which allows Poisson's ratio to be determined by measuring a semiconductor sample in both the pseudomorphic and completely relaxed states. The relationship between the two strain states determines the material's Poisson ratio and this has been found to be 0.320/spl plusmn/0.001 for GaAs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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