Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

Autor:	Po-Kang Yang, Jr-Hau He, Wen-Yuan Chang, Po-Wen Chiu, Shuo-Fang Jeng, Su-Jien Lin, Po-Yuan Teng
Rok vydání:	2013
Předmět:	Yield (engineering) Materials science Passivation Graphene law Electrode Absorptance Nanotechnology Electrical and Electronic Engineering Graphene nanoribbons Graphene oxide paper law.invention Resistive random-access memory
Zdroj:	Proceedings of the IEEE. 101:1732-1739
ISSN:	1558-2256 0018-9219
Popis:	A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 102 cycles and the retention time longer than 104 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b4aeadd83f9f5db171683ee5c048ac85 https://doi.org/10.1109/jproc.2013.2260112 Zobrazit plný text záznamu