Laser vaporization of metal films–Effect of optical interference in underlying dielectric layers
| Autor: | J.C. North |
|---|---|
| Rok vydání: | 1977 |
| Předmět: |
Materials science
Silicon business.industry Orders of magnitude (temperature) technology industry and agriculture General Physics and Astronomy chemistry.chemical_element Dielectric Substrate (electronics) equipment and supplies Laser complex mixtures law.invention chemistry.chemical_compound Light intensity Optics chemistry Silicon nitride law Vaporization business |
| Zdroj: | Journal of Applied Physics. 48:2419-2423 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The interference of incident laser light with light reflected from dielectric interfaces plays an important role in the completeness with which a laser beam vaporizes thin metal films, even though the dielectric layers lie underneath the metal film being vaporized. A structure consisting of titanium‐platinum links on a two‐level dielectric consisting of silicon nitride and silicon dioxide on a silicon substrate was used to demonstrate the effect. The resistance of the titanium‐platinum links after vaporization by pulses of 1.06‐μm light from a Q‐switched YAG laser varied by more than seven orders of magnitude as the thickness of the silicon dioxide, the lower dielectric, was varied. Photographs are included which show visible variations in the effect of the laser pulses. The experimental results are correlated with the calculated resultant light intensity at the surface of the dielectric layers. This intensity varies from 0.07 to 1.6 times the incident beam intensity depending upon the thicknesses of the ... |
| Databáze: | OpenAIRE |
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