Hydrogen-acceptor interactions in diamond
| Autor: | Dominique Ballutaud, Alain Deneuville, J. Chevallier, Etienne Gheeraert, François Jomard, B. Theys, Etienne Bustarret, Alain Lusson, Mathieu Bernard |
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| Rok vydání: | 2001 |
| Předmět: |
Passivation
Mechanical Engineering Diffusion Doping Analytical chemistry Infrared spectroscopy chemistry.chemical_element Diamond General Chemistry engineering.material Acceptor Electronic Optical and Magnetic Materials Deuterium chemistry Materials Chemistry engineering Electrical and Electronic Engineering Boron |
| Zdroj: | Diamond and Related Materials. 10:399-404 |
| ISSN: | 0925-9635 |
| Popis: | Hydrogen-acceptor interactions are investigated in boron-doped diamond through deuterium diffusion experiments followed by SIMS measurements and through infrared absorption spectroscopy. From deuterium diffusion, we show that BD interactions can be properly demonstrated in low compensation B-doped homoepitaxial layers. However, the presence of defects in such layers strongly affects this interaction. The degree of passivation of boron acceptors by deuterium depends on the diffusion temperature. At 550°C or below, the B and D concentrations exactly match giving rise to a complete disappearance of the absorption bands related to the electronic transitions of neutral boron acceptors. Under thermal annealing above 500°C, (B,D) pairs dissociate and neutral boron acceptors recover. At deuterium diffusion temperatures of 700°C, the B passivation is absent. |
| Databáze: | OpenAIRE |
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