Origin of D-band emission in a novel Bi3+-doped phosphor La3SnGa5O14:Bi3+
| Autor: | Puxian Xiong, Huailu Liu, Zhijun Ma, Qinyuan Zhang, Mingying Peng, Sheng Wu, Xiaoqi Liu, Yubin Fu, Quan Liu |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Journal of Materials Chemistry C. 9:3455-3461 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/d1tc00067e |
| Popis: | The luminescence characteristics of Bi3+ ions in solids have been extensively investigated during recent decades; however, the origin of extra spectra signals (referred to as D-bands) of Bi3+ in some compounds still remains ambiguous. In this work, a novel Bi3+-doped phosphor La3SnGa5O14:Bi3+ (LSGO:Bi3+) was successfully synthesized via the conventional solid-state reaction method. The structural characteristics, luminescence properties and concentration quenching of the LSGO:Bi3+ phosphor were investigated systematically and two emission bands centered at 360 and 540 nm were observed, respectively. The narrow band emission centered at 360 nm was attributed to the transition of 3P1 → 1S0 (A-band) of Bi3+ while the broadband emission centered at 540 nm was considered as the D-band emission. A combined experimental and theoretical approach was employed in order to confirm the origin of the D-band emission of LSGO:Bi3+. Temperature dependent photoluminescence of LSGO:Bi3+ and the fluorescence lifetime of two emission centers were studied. Moreover, the energy of metal-to-metal charge-transfer (MMCT) was also calculated. Ultimately, the D-band emission of LSGO:Bi3+ was considered to originate from the forbidden 3P0 → 1S0 electronic transition of Bi3+. This work will contribute to a better understanding of the luminescence mechanisms of Bi3+ doped phosphors and pave the way toward the future development of new effective Bi3+ activated luminescent materials. |
| Databáze: | OpenAIRE |
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