Crystallized ZnO films by inserting the inert metal on ITO and their improved on/off current performance
| Autor: | Yong Chan Jung, In Sung Park, Tae Hoon Lee, Jinho Ahn, Sejong Seong, Seon Yong Kim |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Inert Materials science Mechanical Engineering Insulator (electricity) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Amorphous solid Metal Crystallinity Chemical engineering Mechanics of Materials law visual_art 0103 physical sciences Electrode visual_art.visual_art_medium General Materials Science Crystallization Resistor 0210 nano-technology |
| Zdroj: | Materials Science in Semiconductor Processing. 97:85-90 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2019.03.014 |
| Popis: | A thin inert metal layer of Ru or Au was inserted between a ZnO insulator and ITO bottom electrode to enhance the crystallinity of the ZnO layer and hence to improve on/off current ratio of the ZnO-based resistor by changing between high resistance state and low resistance state. The ZnO/metal/ITO/PET stacks were semi-transparent when the inserted-metals were 5 nm-thick Ru and 10 nm-thick Au, or less. The ZnO films deposited on metal/amorphous-ITO became crystallized whereas the ZnO films on amorphous-ITO kept pristine amorphous phase. The Al/crystallized-ZnO/metal/ITO/PET resistors showed improved resistive switching characteristics, such as a high on/off current ratio from 1.7 to 27.6 (for Ru) and from 1.6 to 7.1 (for Au) as measured at −1 V, compared with that of Al/amorphous-ZnO/ITO/PET resistors. We concluded that the crystallized-ZnO film deposited on 20-nm-thick Ru showed acceptable resistive switching characteristics to distinguish on and off current. |
| Databáze: | OpenAIRE |
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