Formation of interface traps in metal‐oxide‐semiconductor devices during isochronal annealing after irradiation at 78 K

Autor:	Nelson S. Saks, S. Yoon, R. B. Klein, David L. Griscom
Rok vydání:	1991
Předmět:	Materials science Hydrogen Silicon Annealing (metallurgy) Analytical chemistry Oxide General Physics and Astronomy chemistry.chemical_element Semiconductor device Electron chemistry.chemical_compound chemistry Field-effect transistor Irradiation
Zdroj:	Journal of Applied Physics. 70:7434-7442
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.349739
Popis:	We have studied the mechanisms of interface trap (Nit) formation in metal‐oxide‐semiconductor devices during isochronal annealing after irradiation at 78 K. Two distinct Nit formation processes are observed at 120 and 250 K. After irradiation but before annealing, some samples were injected with electrons to remove all the radiation‐induced positive oxide charges. In these samples, the Nit formation process at 250 K is nearly eliminated, in agreement with previous reports, but the lower‐temperature 120 K process increases substantially. Results are explained using a hydrogen model. We also discuss the use of substrate hot‐electron injection, which is used to annihilate the radiation‐induced positive charge, in some detail.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b49955f8b0d9358faea581ad4205aa23 https://doi.org/10.1063/1.349739 Zobrazit plný text záznamu