| Autor: |
Karin Hauck, Michael Toepper, Juergen Leib, Holger Feindt, Ulli Hansen, Kai Zoschke, Simon Maus |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
3rd Electronics System Integration Technology Conference ESTC. |
| Popis: |
The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond layer. A glass layer with a thickness of 3 – 5 µm is sufficient for a stable bond at very moderate bond parameters with bond voltages in the range of 30 – 60 V at standard bond temperatures of around 300 °C and below. This enables the use of anodic bonding also for sensitive devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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