Compensated donors in semi-insulating Cd1−xMnxTe:In crystals
| Autor: | Ye. Nykoniuk, Z. I. Zakharuk, P. M. Fochuk, S. Dremlyuzhenko, S. Solodin, B. Rudyk |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Chemical substance Analytical chemistry 02 engineering and technology Activation energy Thermal treatment Conductivity 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Inorganic Chemistry Crystal Magazine law 0103 physical sciences Materials Chemistry Ionization energy 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 500:117-121 |
| ISSN: | 0022-0248 |
| Popis: | The temperature dependences of electrical characteristics (conductivity σ, the Hall constant RH, and carrier mobility μ) were studied in n-Cd1−xMnxTe:In (x = 0.05; 0.1) crystals grown by the Bridgman method. Reproducibility of electrical characteristics was achieved by thermal treatment at 420 K for 1 h. The RH(T) dependence was characterized by the exponential high- and low-temperature regions with different activation energies. The activation energy in the high-temperature region of RH(T) corresponds to the ionization energy eD of the donors controlling n-type conductivity. The activation energy e1 in the low-temperature region of RH(T) is related to eD by the relation e1 = eD − γeb, where γ-factor is close to 1 and eb is activation energy, which determined the temperature dependence of carrier mobility in the low-temperature region. The presence of this region is due to micro-inhomogeneities, which are formed during post-growth cooling of the crystal. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect