Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition
| Autor: | Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Glow discharge Materials science Atmospheric pressure Hydrogen Mechanical Engineering Metals and Alloys Analytical chemistry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Evaporation (deposition) chemistry Mechanics of Materials 0103 physical sciences Materials Chemistry Deposition (phase transition) Capacitively coupled plasma 0210 nano-technology Indium |
| Zdroj: | Journal of Alloys and Compounds. 728:1217-1225 |
| ISSN: | 0925-8388 |
| Popis: | Indium (In) evaporation is enhanced by high-pressure hydrogen glow plasma, and a sponge-like In film containing submicron pores is prepared on the substrate. The glow plasma is generated at a total pressure of 13.3 kPa (100 Torr) as a capacitively coupled plasma. When the process atmosphere is diluted by He and Ar, the In evaporation rate increases by increasing the hydrogen concentration and no evaporation is observed without H 2 gas. The In deposition rate exhibits no dependence on the In temperature in the range from 300 °C to 600 °C. However, the In deposition rate increases linearly by increasing the input power. The obtained deposition rate reaches 7.5 mg/s with an input power of 800 W even at an In temperature of 450 °C. The obtained weight deposition rate is equivalent to the thickness deposition rate of 1.6 μm/s. The prepared In film on the Si substrate is composed of a porous foam-like structure. The particle diameter distributes from 40 nm to a few tens of micrometers. The particles with diameters above a few micrometers reveal a porous structure with a pore size of less than 100 nm. The obtained In film consists of crystalline In. Thermal desorption measurements of the prepared In film reveal that a large amount of H 2 gas is confined in the In film relative to the hydrogen solubility in solid In. The obtained results suggest that the excess hydrogen solubility in the liquid metal induced by H 2 plasma is an important factor for the enhancement of In evaporation. |
| Databáze: | OpenAIRE |
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