Relaxation dynamics of the optically driven nonequilibrium states in the electron- and hole-doped topological-insulator materials (Bi1−xSbx)2Te3

Autor: Gertjan Lippertz, Yoichi Ando, Paul H. M. van Loosdrecht, Zhe Wang, Chris Reinhoffer, Semyon Germanskiy, Andrea Bliesener, Anjana Uday, A. A. Taskin, Yu Mukai
Rok vydání: 2020
Předmět:
Zdroj: Physical Review Materials. 4
ISSN: 2475-9953
Popis: We report on time-resolved mid-infrared-pump terahertz-transmission-probe studies of the topological-insulator materials ${({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}$, in which by varying $x$ charge carriers are chemically tuned to be of $n$-type or $p$-type. Relaxation dynamics is found to be different in various aspects for transitions below or above the band gap, which are selectively excited by changing the pump-pulse energy. For the below-band-gap excitation, an exponential decay of the pump-probe signals is observed, which exhibits linear dependence on the pump-pulse fluence. In contrast, the relaxation dynamics for the above-band-gap excitation is characterized by a compressed exponential decay and nonlinear fluence dependence at high pump flunences, which reflects interaction of the excited nonequilibrium states.
Databáze: OpenAIRE