Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
| Autor: | Q.J. Hartmann, D.A. Ahmari, Milton Feng, G. E. Stillman, G. Raghavan, M. Hattendorf |
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| Rok vydání: | 1999 |
| Předmět: |
Work (thermodynamics)
Materials science Drift velocity business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Heterojunction Signal Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 46:634-640 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.753694 |
| Popis: | This work describes the temperature dependence of the DC and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT's) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature dependence of both DC and high-frequency parameters are presented. An HBT delay-time analysis is also presented and justified empirically. In addition, the factors causing the decrease in f/sub T/ with temperature are described, and the variations in collector resistance and collector drift velocity with temperature are determined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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