Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor
| Autor: | Youngjoon An, Chung-Soo Kim, Jaeyoon Baik, Intek Song, Chaehyeon Ahn, Hyunseob Lim, Dae Hyun Kim, Jiwon Bang, Seunghyun Shin, Jaehoon Jung, Jee Hyeon Kim, Jong-Guk Ahn, Younghee Park |
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| Rok vydání: | 2021 |
| Předmět: |
Growth pressure
Carbon contamination Materials science 02 engineering and technology Molecular precursor 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Physisorption Chemical engineering Covalent bond Chemisorption Monolayer General Materials Science 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 13:6805-6812 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands. |
| Databáze: | OpenAIRE |
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