Si/Ge self-assembled quantum dots for infrared applications
| Autor: | S. M. North, Patrick R. Briddon, M R Kitchin, M. A. Cusack, Milan Jaros |
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| Rok vydání: | 2001 |
| Předmět: |
business.industry
Infrared Band gap Doping Physics::Optics chemistry.chemical_element Nanotechnology Germanium Electronic structure Electron Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Quantum dot Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Quantum well |
| Zdroj: | Semiconductor Science and Technology. 16:L81-L84 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/16/11/102 |
| Popis: | We introduce Si/Ge self-assembled quantum dots for infrared applications operating in the 3-5 µm range. Conventional Si/Ge quantum well structures are transparent to such wavelengths in the absence of heavy doping. We show that the high degree of strain lowers the bandgap and also that the electrons and holes are both localized in the interfacial region. This will consequently enhance the optical transition probabilities. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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