P-2: High Performance of Polycrystalline Silicon TFT on Plastic Substrate Processed at Very Low Temperatures
| Autor: | Sun Jin Yun, Choong-Heui Chung, Jin Ho Lee, Myung-Hee Lee, Jung Wook Lim, Yong-Hae Kim, Gi Heon Kim, Jaehyun Moon, Dong-Jin Park, Yoon-Ho Song |
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| Rok vydání: | 2006 |
| Předmět: |
Interface layer
Materials science business.industry Gate dielectric technology industry and agriculture Nanocrystalline silicon Substrate (electronics) Plasma engineering.material Buffer (optical fiber) Polycrystalline silicon Thin-film transistor Electronic engineering engineering Optoelectronics business |
| Zdroj: | SID Symposium Digest of Technical Papers. 37:197 |
| ISSN: | 0097-966X |
| Popis: | A high performance of ultralow temperature polycrystalline silicon TFT was obtained on a plastic substrate using the optimization of an oxide-silicon-oxide buffer structure for an plastic substrate, the high quality SiO2 interface layer formation between the gate dielectric film and the poly-Si film using a plasma oxidation. |
| Databáze: | OpenAIRE |
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