Vapor phase epitaxial growth and characterization of InP on GaAs

Autor:	F. J. Rosenbaum, J. M. Ballingall, S. J. J. Teng
Rok vydání:	1986
Předmět:	Electron mobility Physics and Astronomy (miscellaneous) business.industry Chemistry Doping Mineralogy Crystal growth Heterojunction Substrate (electronics) Chemical vapor deposition Epitaxy Optoelectronics Thin film business
Zdroj:	Applied Physics Letters. 48:1217-1219
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.96986
Popis:	Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs substrate. Carrier concentration profile and Hall mobility measurements from as‐grown n‐type InP layers show that its doping behavior and mobility are similar to those grown on InP substrates. The results are encouraging for the development of devices utilizing InP/GaAs heterojunctions and the use of bulk GaAs as an alternative substrate to bulk InP for the epitaxial growth of InP and related compounds.
Databáze:	OpenAIRE
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