Redistribution layer (RDL) process development and improvement for 3D interposer

Autor:	A. D. Trigg, Fa Xing Che, Keng Hwa Teo, H. M. Chua, S. Gao, Hongyu Li
Rok vydání:	2011
Předmět:	Materials science Annealing (metallurgy) business.industry Process development Electronic engineering Copper interconnect Interposer Optoelectronics Redistribution layer Integrated circuit packaging Thermal reliability business
Zdroj:	2011 IEEE 13th Electronics Packaging Technology Conference.
Popis:	RDL process becomes more and more important with through Si interposer (TSI) application in 3D packaging. RDL line/space needs to be shrinking with the increasing of device density. We had been developed low temperature (LT) damascene process for the RDL formation in 3D interposer integration. The sample failed at thermal reliability test. High temperature (HT) RDL was developed and demonstrated after TSV annealing temperature optimization in this paper.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b47a2ad459024f028475bcdba8db3ec5 https://doi.org/10.1109/eptc.2011.6184442 Zobrazit plný text záznamu