Mechanisms of Halogen Chemisorption upon a Semiconductor Surface: I2, Br2, Cl2, and C6H5Cl Chemisorption upon the Si(100) (2.times.1) Surface

Autor:	Harris C. Flaum, Daniel J. D. Sullivan, Andrew C. Kummel
Rok vydání:	1994
Předmět:	Sticking coefficient Adsorption Physisorption Chemistry Chemisorption Stereochemistry Halogen General Engineering Physical chemistry Activation energy Physical and Theoretical Chemistry Diatomic molecule Molecular beam
Zdroj:	The Journal of Physical Chemistry. 98:1719-1731
ISSN:	1541-5740 0022-3654
Popis:	Chemisorption probabilities (S) of monoenergetic I 2 , Br 2 , Cl 2 , and C 6 H 5 Cl beams have been measured on the Si(100)(2×1) surface. The sticking probabilities (S) were measured as a function of the incident translational energy (E i ), the surface temperature (T s ), the angle between the incident beam and the surface normal (θ i ), and the surface adsorbate coverage (θ). All three diatomic halogens can adsorb via both precursor-mediated and direct-activated chemisorption, while C 6 H 5 Cl adsorbs only by precursor-mediated chemisorption. For the diatomic halogens, precursor-mediated chemisorption is most significant for I 2 , followed by Br 2 , and Cl 2
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b479ce324cd20be06f7306f2f2dba49f https://doi.org/10.1021/j100057a028 Zobrazit plný text záznamu