| Autor: |
Suk-Jin Chung, Cha-young Yoo, Soo-Ik Jang, Kyu-Ho Cho, Jin Yong Kim, Joo-Tae Moon, Byeong-Yun Nam, Jae-soon Lim, Ki-chul Kim, U-In Chung, Byung-Il Ryu, Han-jin Lim, Kyung-In Choi, Sung-ho Han, Kwang-Hee Lee, Jin-Il Lee, Jeong-Hee Chung, Sung-Tae Kim |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.. |
| DOI: |
10.1109/iedm.2004.1419308 |
| Popis: |
As a new alternative for the DRAM capacitor of 50 nm generation, Ru/Insulator/TiN (RIT) capacitor with the lowest Toxeq of 0.85 nm has been successfully developed for the first time. TiO/sub 2//HfO/sub 2/ and Ta/sub 2/O/sub 5//HfO/sub 2/ double-layers were used as dielectric materials. After full integration into 512 Mbits DRAM device, the RIT capacitor showed good electrical properties and thermal stability up to 550/spl deg/C and its time-dependent-dielectric-breakdown behavior sufficiently satisfied 10-year lifetime within a DRAM operation voltage. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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