Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy

Autor:	V. Ya. Aleshkin, A. L. Chernov, B. N. Zvonkov, Yu. N. Saf'yanov, D. O. Filatov, I. G. Malkina
Rok vydání:	1998
Předmět:	Materials science Photoluminescence Condensed matter physics Condensed Matter::Other business.industry Linear polarization media_common.quotation_subject Alloy engineering.material Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Polarization (waves) Asymmetry Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science engineering Optoelectronics Wafer business Quantum well media_common
Zdroj:	Semiconductors. 32:1119-1124
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1187541
Popis:	This paper investigates the linear polarization of photoluminescence emitted along the plane of an InAs/Ga(In)As wafer. The polarization was observed to depend on the asymmetry of the quantum-well shape, quantum-dot formation, and the presence of inclusions in the bulk alloy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b46aa87d0b6eb90d5e070927acb1d914 https://doi.org/10.1134/1.1187541 Zobrazit plný text záznamu Plný text ve formátu PDF