Exceptionally high voltage Schottky diamond diodes and low boron doping
| Autor: | S. Deneault, K. E. Krohn, R. Wright, J. M. Lawless, D. D. Flechtner, James E. Butler, Theodore M. Lyszczarz, Michael W. Geis |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Doping Analytical chemistry Schottky diode Diamond Chemical vapor deposition engineering.material Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Semiconductor Materials Chemistry engineering Breakdown voltage Electrical and Electronic Engineering business Diode |
| Zdroj: | Semiconductor Science and Technology. 18:S67-S71 |
| ISSN: | 0268-1242 |
| DOI: | 10.1088/0268-1242/18/3/309 |
| Popis: | Exceptionally pure epitaxial diamond layers have been grown by microwave plasma chemical vapour deposition, which have low boron doping, from 5 × 1014 to 1 × 1016 cm−3, and the compensating n-type impurities are the lowest reported for any semiconducting diamond, 700 °C for ~1 s in air. Schottky diodes made on these epitaxial diamond films have breakdown voltages >6 kV, twelve times the highest breakdown voltage reported for any diamond diode and higher than any other semiconductor Schottky diode. |
| Databáze: | OpenAIRE |
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