A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

Autor:	S.Y. Chang, Hon-Jarn Lin, S.H. Yang, R. Chen, R.F. Tsui, Jhon-Jhy Liaw, S. M. Jang, M.C. Chiang, C. H. Hsieh, C.H. Yao, P N Chen, K T Lai, Y S Mor, Lin Chih-Yung, Chun-Kuang Chen, Kuang-Hsin Chen, Chia-Pin Lin, J.H. Chen, C.H. Tsai, Y. Ku, T. Miyashita, Ming-Huan Tsai, C. H. Lee, Chang Chih-Yang, Hou-Yu Chen, K.H. Pan, Shien-Yang Wu, Joy Cheng, C S Liang, Kuei-Shun Chen, C.H. Chang, Vincent S. Chang
Rok vydání:	2016
Předmět:	010302 applied physics Engineering business.industry 020208 electrical & electronic engineering Transistor Sram cell Electrical engineering High density Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention Power (physics) Reduction (complexity) CMOS law Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Static random-access memory business
Zdroj:	2016 IEEE International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm.2016.7838333
Popis:	For the first time, a leading edge 7nm CMOS platform technology for mobile SoC applications is presented. This technology provides >3.3X routed gate density and 35%∼40% speed gain or >65% power reduction over our 16nm FinFET technology. A fully functional 256Mb SRAM test-chip with the smallest high density SRAM cell of 0.027um2 is demonstrated down to 0.5V. The 4th generation FinFET transistors are optimized with device mismatch reduction by 25%∼35% and multi-Vt device options to enable low power and high performance design requirements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b45e5653ee5ec76f93d6159ac9161bd4 https://doi.org/10.1109/iedm.2016.7838333