Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by gold diffusion study

Autor:	E. Yakimov, I. Périchaud
Rok vydání:	1995
Předmět:	Materials science Deep-level transient spectroscopy Physics and Astronomy (miscellaneous) Silicon Diffusion Analytical chemistry chemistry.chemical_element Crystallographic defect Oxygen Crystallography Phosphorus diffusion chemistry Wafer Solubility
Zdroj:	Applied Physics Letters. 67:2054-2056
ISSN:	1077-3118 0003-6951
Popis:	Gold diffusion was used to understand the influence of phosphorus diffusion on defect structure of two step annealed Czochralski silicon wafers which contain oxygen related precipitates. Thanks to deep level transient spectroscopy measurements and use of relations already published, it was found that substitutional gold concentration is independent of oxygen precipitation, while phosphorus diffusion, by means of the injection of self‐interstitials in the bulk, shrinks the oxygen precipitates and increases substitutional gold concentration approximately to the solubility limit.
Databáze:	OpenAIRE
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