On the non-linear dependence of photocarrier radiometry signals from Si wafers on the intensity of the laser beam
Autor: | J. Tolev, Michał Pawlak, Andreas Mandelis |
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Rok vydání: | 2008 |
Předmět: | |
Zdroj: | The European Physical Journal Special Topics. 153:317-320 |
ISSN: | 1951-6401 1951-6355 |
Popis: | The subject of this research was the dependence of the infrared photocarrier radiometric (PCR) signal on the intensity of the exciting super-bandgap laser beam. It has been shown that the amplitude of the PCR signal is proportional to the intensity to a power β, such that 1≤β≤2. The power dependence of the amplitude is an important indicator of the photoexcited carrier recombination physics, specifically in semiconductors ranging between monopolar (β = 1) and bipolar (β = 2) limits. The study was made with laser beams of varying power and spotsize and wafers with different transport parameters. It has been found that the conventional approach using β = 1 is inadequate and inconsistent with experimental slopes of amplitude vs. power. |
Databáze: | OpenAIRE |
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