On the non-linear dependence of photocarrier radiometry signals from Si wafers on the intensity of the laser beam

Autor:	J. Tolev, Michał Pawlak, Andreas Mandelis
Rok vydání:	2008
Předmět:	Materials science Photothermal spectroscopy Infrared business.industry Band gap General Physics and Astronomy Signal Intensity (physics) Amplitude Semiconductor Optics Radiometry General Materials Science Physical and Theoretical Chemistry business
Zdroj:	The European Physical Journal Special Topics. 153:317-320
ISSN:	1951-6401 1951-6355
Popis:	The subject of this research was the dependence of the infrared photocarrier radiometric (PCR) signal on the intensity of the exciting super-bandgap laser beam. It has been shown that the amplitude of the PCR signal is proportional to the intensity to a power β, such that 1≤β≤2. The power dependence of the amplitude is an important indicator of the photoexcited carrier recombination physics, specifically in semiconductors ranging between monopolar (β = 1) and bipolar (β = 2) limits. The study was made with laser beams of varying power and spotsize and wafers with different transport parameters. It has been found that the conventional approach using β = 1 is inadequate and inconsistent with experimental slopes of amplitude vs. power.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b44e0d45468360d603d65f37761bf4de https://doi.org/10.1140/epjst/e2008-00454-0 Zobrazit plný text záznamu Full text from SpringerLink